The Truth Behind Charged Barrier Technology

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Fogal Transistor:  Article             The Truth Behind Charged Barrier Technology

 Copyright © 1997 Bill Fogal

With Special Commentary andAnalysis by Colonel Tom Bearden (Retired U.S.Military Officer, Nuclear Physicist)


"We are only bound by the limits of our own imagination." We perceive whatwe cannot see. We feel what we cannot hear.  We strive for perfection inour thought models, but we seem to forget that sometimes it is theimperfections in nature that can help to make things work.1

This paper covers a new way of thinking in solid state physics. Now oneseeks to utilize and tame pure energy flow rather than just broadlydissipating the collected energy by means of electron current flow. The paper also looks at some of the ideas and theories that make up our world. The Fogal semiconductor -- which is an experimentally demonstrated device-- may force us to ask some unique questions about conventional EMtheories and wonder, "Do things really work that way? Could theywork differently after all?"

We particularly caution the reader against simply assuming normal EMtheory, either classical or quantal, as having the "final answers." Thetopology of these models has been severely and arbitrarily reduced. If onelooks at circuits in a higher topology algebra, many operations arepossible, though excluded from present tensor analysis.2

Energy Flows Continuously from Magnetic and ElectricCharges

Have you ever taken two magnets and held one magnet in each hand, with themagnets facing each other with the same poles? As you bring the magnetsclose to each other, you can feel the repulsion and the build-up of the"energy field" as the magnets begin to push your hands away from eachother. Each of the magnetic poles is pouring forth hidden energy3 that acts upon the other pole, producingthe force that you feel.

That energy is continuously flowing from the magnets,  4, 5, 6 and fills the entire space around them,literally to the ends of the universe. The electron7 also has such a flowing energy field, andelectrons will react just like the magnets under certain conditions. Whentwo like charges approach each other, their streams of energy impact oneupon the other, and produce

 (i) excess pileup of energy8 onthe electrons, and (ii) mutual repulsion.

However, unlike the magnets, usually the electrons are notoriouslyfree to move. So free electrons will rapidly move away from the site ofrepelling charges. As electrons mutually repel each other and move away,they also drain away the collected portion9 of their excess energy field in theprocess.10

Now if we could only collect and use the energy from the flowing energyfield directly, further down the circuit, and not move the repellingelectrons themselves! In that case our constrained electrons wouldcontinue to be an inexhaustible source of that energy flow, and wecould collect and use the excess energy from them, without draining awaythe source by allowing electron current flow from it.

And there'd be another great advantage: We would also rid ourselves ofmost of the electron collision noise, that is created in thelattice by the longitudinal movement of the electrons as ordinary current.In other words, we could simply use the direct energy flow changes causedby our signal modulations, without adding lots of little unwanted andspurious field changes due to those electron collisions. This notion issimple: Use field energy flow to bypass the blocked electron flow, andyou bypass much of the noise in the intervening transmission line andassociated circuits.

Some Simply Addressed But AdvancedContent

To fully comprehend some of the content of this paper, a fairly extensiveknowledge of quantum solid state physics is helpful. Even then, using thetantalum electrolytic capacitive material to form and sustain spin densitywaves at room temperature, and forming an EM field by moving andoverlapping the energy states of compressed electrons, appear to be newareas in solid state physics. This paper will also explain why the ACJosephson tunnel junction effect can be developed at room temperature inthe charged barrier device, and how and why the AC supercurrent can alsobe developed at room temperature.11

Design, Components, andFunctions

Let's Take a Look at the Basic Design

The simplified schematic of the hybrid charged barrier semiconductor isshown here in Figure 1:

The device has an electrolytic capacitor and a parallel resistor attachedto the emitter junction of a bipolar transistor. Such a circuitconfiguration has been known in textbook theory as a bypass elementand the capacitor in the circuit configuration will react to frequency tolower the emitter resistance and create gain. However, there is oneinteresting point to consider. I have been granted two U.S. Patents on thesame circuit configuration, using an electrolytic capacitor to forma unitary structure. Under certain conditions, electrolytic capacitorsreact differently in this type of circuit configuration than astandard non-electrolytic bypass capacitor.

I use the electrolytic capacitor to create a unique electromagnetic field.The parallel resistor is used to "bleed-off" excess charge potential fromthe plate of the capacitor to generate the electromagnetic field. It alsoperforms another function we will detail later. The exact values of thecapacitive element and resistive element are not listed at this time.

Let's Look at Capacitors

In theory, a simple capacitor will pass an AC signal and voltage and blocka DC voltage from crossing the plate area. However, a physical capacitoris not necessarily simple; instead, it is a complicated systemhaving many internal functions. An electrolytic capacitor will passan AC signal and voltage, and also hold a DC charge -- with itsaccompanying DC potential -- on the plate area of the capacitor.12 If an electrolytic capacitor can hold aDC charge potential on the plate area, then one can move small portions ofthat charge potential and that charge, with the use of a parallelbleed-off resistor. This small bleed-off current and change ofE-field will create a very small, associated magnetic field on theplate area of the capacitor. Through experimentation it has been foundthat this very small electromagnetic field will oscillate at a very highfrequency that is not detected under normal test conditions.13

Conventional theory has shown that one needs to have a movement of thecharge state to generate current to create a magnetic field.14 However, theory does not tell the exactamount of current needed to create the fiel d. Could the bleed-off effectfrom a parallel resistor element change enough of the charge state tosustain a very small EM field? The resistor element would have to havejust the right specific value in order to bleed-off just enough excesscharge potential, so that the charge state between the plate of thecapacitive element and the resistor bleed-off would not reach a point ofequilibrium (equalization) between the charge states.


Scope Traces

At the point of charge, with no signal applied, and with a bias of thejunction, the capacitive element will charge to the voltage potential of250 mV DC at the emitter junction. The parallel resistor element will workto "bleed-off" excess charge from the capacitor plate area, and try toreach a point of equalization of the charge state. However, the associatedfield will oscillate at a frequency around 500 MHz and will notreach a point of total equalization due to this high frequencyoscillation. In other words, equilibrium does not occur.15

 Formation of Electromagnetic Field

Figure 2.The formation of the electromagnetic field is shown in Figure 2, which isa photograph from a Tektronix transistor curve tracer operating in themicroamp region. A reading of the DC operating voltage of the emitterjunction of the transistor will not show a change in the voltagepotential due to the high frequency oscillation of the electromagneticfield. At this point, the emitter electrons become trapped and pinnedwithin the electromagnetic field of the capacitor. This pinning blockscurrent and dampens the amount of electron collision noise and heat due toelectron interaction.16

 Charge-Blocking and Formation of the ACSupercurrent

Figure 3.The photograph in Figure 3 is taken from the Tektronix transistor curvetracer operating in the microamp region. At the point of a small signalinjection to the base region of the transistor, the effect of the ACcarrier disruption to the internal DC emitter junction electromagneticfield can clearly be seen. This effect is caused by the Overpotentialof Charge State and the compression of the pinned electronclusters within the DC charged electromagnetic field developed by thecapacitor. At this point in device conduction, the parallel resistorelement will try to equalize the field charge, and align the pinnedelectron clusters in the charged field on the capacitor plate. TheE-field will start to develop along with its associated Poyntingenergy density flow (S-flow).17

 Formation of the AC Supercurrent

Figure 4.The photograph in Figure 4, taken from the Tektronix transistor curvetracer, shows the effect to "disruption and compression of the pinnedelectron clusters." At this point in time, in the semiconductor theparallel resistor element can no longer handle the bleed-off of excesscharge potential from the charged plate of the capacitor, due to thecompression of electrons and the consequent rapid formation of anE-field. So there is a buildup of the Poynting energy density flowdue to the change in electron energy state and compression of chargeclusters. A spin density wave will develop and increase within thetantalum capacitor.18

 Discharge of the AC Supercurrent

Figure 5.The photograph in Figure 5, again taken from the Tektronix transistorcurve tracer, shows almost the full development of the AC supercurrent,due to the Poynting energy density flow and the increased spin densitywave action of the tantalum capacitor. The development of theE-field is almost complete. The emitter junction DC electromagneticfield is about to collapse and release the AC supercurrent as well as theflow of Poynting energy density. The AC supercurrent is too massive andthe increased nature of the spin density wave of the tantalum element istoo fast, due to the buildup of the E-field, for the bleed-offresistor to effectively regulate and shut down the action.19

 Poynting Energy Flow


Figure 6. 

Taken from the Tektronix transistor curve tracer, thephotograph in Figure 6 shows the point of discharge and the Poyntingenergy density flow, the AC supercurrent, and the collapse of the DCcharged electromagnetic field, due to the change of energy state on theplate of the tantalum capacitor. Most of the device conduction is aPoynting energy density flow across the doped regions of the device'scrystal lattice. With a dramatic decrease in electron collisions, theS-flow now is not subject to distortions due to the materialdefects within the lattice structure. Device switching times are farfaster (at optical speed) and there are few if any limitations onfrequency response.

 The phenomenal frequency response -- up toessentially the optical region -- follows, since the shortest frequencywavelengths can be passed directly as Poynting energy density flow.20 Without divergence or scattering of thisenergy flow, there is no "work" being done in the conventional sense onthe non-translating electrons in that region, even though they arepotentialized. That is, electron transport has been haltedtemporarily or dramatically reduced, while the Poynting flow continuesapace. With most electrons not being translated longitudinally, there isno heat build-up in the device as there is with lattice vibrationinteractions with a normal electron current.21 This device can work as a chargecoupled device22 with theability to pass both voltage and Poynting current flow S ratherthan conduction electron current flow dq/dt.23

Researching Charge and Poynting Flow inCircuits

Tom Bearden is a very good friend of mine in Huntsville, Alabama. Tom hasbeen deeply involved in research for a number of years to explain anddefine the charge state in physics. He has taken a serious look at theflow of Poynting energy in circuits,24 and how most circuit analysis focuses onthe power (rate of dissipation of the energy flow) in circuits rather thanon the actual rate of energy transport flow (which is not power at all, ifit is not dissipated). Tom can explain the basic theory for formation ofthe charge state25 and he canexplain the Poynting energy flow used in my charged barriertechnology.26 The reader is referredto the extensive endnote comments added by him. Over the last few years ithas been a real pleasure to exchange ideas with him.

Remember the Magnets

Tantalum is one of the elements that is used in the construction of thecharged barrier device, as well as the "parallel resistor element." Undercertain conditions, when stimulated with a very small electric current toalign the charge state, the excess bleed-off effect due to the parallelresistor can move the charge state on the capacitor and develop a verysmall electromagnetic field. Electrons are "held" and "pinned" within thisfield to reduce electron lattice interaction within the emitterjunction.

With the influence of the AC conduction electrons reacting with the pinnedelectrons within the charged field, a unique effect will start to happen:The clusters of bound electrons within the charged field are compressed toa point where there is a "change of energy state" within the compressed,bound electrons in the tantalum lattice. This will start the formation ofthe E-field due to the interaction of the compressed electronclusters with the influence of the AC conduction electrons. Remember themagnets when their like poles were brought within close proximity to eachother? An analogous action will start the formation of the AC supercurrentand the Poynting energy flow within the device.27

Charged Barrier Fogal Engine

Putting together all the actions we have discussed, we may compare theelectromagnetic actions as the actions of a special kind of enginecycling, as shown in Figure 7.

In Figure 7, we show four analogous actions involved in the "Fogalengine". Figure 7A shows the start of the "down stroke" of the Fogalemitter piston, so to speak, and the formation of the DCelectromagnetic field. Figure 7B shows the signal injection intothe cylinder from the injector base region, as the emitterpiston pulls the signal into the chamber. Figure 7C shows thecompression of electron density and the formation of the amplifiedE-field due to the charge compression, with a resultingexpansion of the Poynting energy density flow. Figure 7D shows thepoint of discharge of the Poynting energy density flow, theresulting AC supercurrent, and the collapse of the DCelectromagnetic field of the emitter piston.

Testing the Fogal Charged BarrierSemiconductor

Device Testing Parameters for Tektronix

Now that you have seen the pictures of the formation of the internal DCelectromagnetic field and the development of the AC supercurrent, I willexplain how to test this device. The Charged Barrier device has certaintesting parameters that have to be followed to test it accurately. Thedevice must be operated within certain parameters to maintain the internalelectromagnetic field action. Tests have to be constructed on theTektronix transistor curve tracer in the microamp range of operation, inorder to keep from saturating the internal electromagnetic field.Important: The Charged Barrier prototype device will test andlook like a normal transistor when tested or operated outside of itsspecified operating parameters!

In the tests, the testing parameters on the Tektronix were set up asfollows: The collector current was set at 20 µA per division. Thebase current was set at 0.1 µA with signal injection to the baseregion. The supply voltage was set at 10 V DC per division. The signalinjection was 100,000 kHz (100 MHz) at a level of less than 100 µVAC. Important: This device cannot be tested on the Tektronix curvetracer equipment in the milliamp range of operation for a normaltransistor. Testing it in the milliamp range will overload and shut downthe internal electromagnetic field developed by the electrolyticcapacitor. The prototype device will then test and look like any normaltransistor, with similar noise figure, gain, and frequency range. The"new effects" only occur at the proper microamp range as specified, andonly then does one obtain in the Fogal transistor the dramatic noisereduction, increase in sensitivity, increased gain, and increasedfrequency response as well as "optical" type functioning due to theblocking of dq/dt current flow and the increase in Poynting energy densityflow.

Circuit Testing the Device

The Fogal Charge Barrier transistor can be tested under normal circuitconditions with a 3 V DC supply voltage and a bias to the base-emitterjunction of 0.7V DC with the emitter grounded. A normal transistorunder these conditions will turn on and conduct with an input to the baseregion of 4.5 mV AC at 0.1 µA AC, and produce a gain at the collectorjunction of 20 mV AC with 0.1 µA of current. Under the samecircuit conditions, the Charged Barrier device with a signal injectionof 200 µV AC at 0.1 µA to the base region, will produce 450 mVAC and an AC current of 133 µA AC at the collector junction. Alarge signal injection to the base region of the Charged Barrier devicewill overload and shut down the internal electromagnetic field and thedevice will test just like a normal transistor, until a point of devicesaturation is reached where the device will pass large amounts of currentwithout a noticeable change in device temperature.28 The device can easily be used in existingequipment for signal processing applications to process and reduce thenoise content of signals.

Device Wave Function

Though not in conventional theory, signal waves actually travel in wavepairs,  29, 30  each pair containing the familiar waveand an associated "hidden" antiwave. The two waves of the pair have thesame frequency. Current semiconductor technology cannot separate thesewave pairs, due to limitations in switching time.31 The Charged Barrier device can switch at a sufficientlyfast rate to:

 (i) separate the wave pairs at the higher frequencies and (ii)define the "polarization of light waves" to show background imaging andenhanced video resolution.

A pre-recorded audio or video tape can be processed to reveal hiddensounds or background imaging that standard electronic equipment will notprocess.32 The device has been shownto process frequencies in the range from 20 Hz to 5 GHz and higher with noloss in frequency response, due to the ability of the device to separateand process wave pairs, and due to faster device switching.

Some ForeseeableApplications

Charged Barrier Applications

Prototype Charged Barrier devices have been tested in video equipment toprocess composite video images for a higher resolution. The device has theability to process and separate the wave pairs and define the"polarization" of light from background objects. This ability can producea high definition image on a CRT, and a near-holographic image on liquidcrystal display panels. The clarity of liquid crystal display panels canbe greatly improved by the switching speed of the Charged Barriertechnology, with the visual improvement sometimes being startling.

Novel Encryption and TransmissionCapability

A preliminary test was constructed in Huntsville, Alabama in May of 1996to determine if video information could be infolded within a DCvoltage potential and transmitted across a wired medium.33 Live video information at 30 frames persecond was processed and converted by full wave rectification into a DCpotential at a voltage of 1.6 V DC and connected to a twisted pair wiremedium of 2,000 feet in length. As a voltage, the 5 MHz video informationrectified to DC potential had no modulation or AC signal present thatcould be detected by sensitive signal processing equipment. The analogoscilloscopes that were used to monitor the transmission could only seethe DC voltage flat line, although the best digital storage scope couldsee very weak signal residues because of slightly less than 100%filtering. I later performed additional tests with increased filtering, sothat the residues could not be seen. These tests were constructed to seeif video information could be "infolded" into an audio carrier andtransmitted across an ELF frequency transmission source for communicationwith submarines, or down a 2,000 ft twisted wire pair. The Charged Barrierdevice was able to process the hidden video, due to the ability of thedevice to sense the infolded AC electromagnetic wave information hiddeninside the rectified DC voltage, sensed as a disruption to the internal DCelectromagnetic field of the Charged Barrier device. Using the Fogalsemiconductor, a good video image was shown on the monitor at the end ofthe wired medium. The Huntsville test was considered encouraging. Asstated, I have since repeated the test with a better buildup, to eliminatethe very weak signal residues, and the effects are real and replicable.Use of the "infolded" EM waves in an ELF carrier for video frequencysignaling is real.

A novel effect uncovered in the Huntsville tests was that, by adjustingthe gain control of the receiving box containing the charged barrierdevice, the focused field of view of the fixed image could be varied, eventhough no adjustment at all was made in the video camera's stationaryfocusing. This showed that the "internal information" in an image actuallycontains everything needed to scan a fixed volume of space, forward andbackward in radial distance, in a focused manner. The internalinformation seems to contain information on the entire volume of view ofthe camera.34 And it is possible toscan that volume, from a seemingly "fixed" image where much of the imageis "out of the camera-focused field of view). The implications for photoanalysis are obvious and profound.

The Charged Barrier device, once precision prototypes are available, canbe utilized to encode signals within signals, similar to wavelettechnology, or within voltage. Transmissions of such infolded signalscould not be detected by conventional signal processing equipment withoutfirst being processed by a Charged Barrier device. Without the need forfiber optic cable, conventional wired telephone or cable networks and highvoltage AC transmission lines could be used as a transmission sourcewithout the need for line amplifiers or noise cancellation equipment.There would be essentially no bandwidth limitations, once the technologyis developed.

Future Charged Barrier Applications

Existing radar technology can be refined and improved with the ChargedBarrier device. One of the most complex problems in the industry is the"noise content" in signal processing. The Charged Barrier device can beused as a front end low noise amplifier and increase the sensitivity ofthe target signature scan capability. Radar imaging could be greatlyimproved simply by processing the return image with the Charged Barrierdevice for high resolution CRTs and liquid crystal display panels. Systemscould also be improved for faster targeting and return echo due to theoptical speed of the Charged Barrier device switching. By utilizing the"internal" information, it should be possible to develop improved imagingfor sonar applications, so there will be no gaps in the frequencyspectrum. The ability to "get at" and detect the hidden internal EMinformation of an object from its surface reflection, is an innatecapability of the Charged Barrier device that needs to be explored. It isalready well-known that the entire interior of a dielectric participatesin the reflection of light from it; the information on the interior of thereflecting object is in the reflected image, but in the form of hidden EMvariables.

New Type of Radar and Sonar ImagingApplication

A new type of "volume viewing" radar system can be constructed with theCharged Barrier Technology that can scan the "inner EM signal image"produced over a given area or volume, sensing disruptions within theearth's magnetic field. The movement through that volume of an object --such as a low-flying aircraft made of metal or epoxy resin skin design --can be detected and tracked, regardless of electronic countermeasures andatmospheric disruptions such as tornadoes, hurricanes, or windshear due tomicrobursts, without the need for target echo return capability.The Charged Barrier device can sense and amplify very small disruptions tothe "internal" electromagnetic fields and create an image foridentification. The volume can be scanned "in focus" back and forth indistance.

For sound direction and distance sensing, the pinna (small folds) of theouter ear use phase reflection information more than 40 dB below theprimary sound signal that strikes the eardrum.35 Any target's nonlinearities and defects,regardless of overall reflective angle and reflective sonar signals, alsoproduce such minute, hidden "pinna" phase reflections and disturbancesin:

(i) sonar reflections, (ii) the Earth's magnetic field (and in fact inthe electric field between the surface of the Earth and theelectrosphere), and (iii) in the ocean, in the overall subsurfacestatic potential formed by the conglomerate potentials of the hydrogenbonding, ionizations, etc.

These "pinna" signals are broadcast through the surrounding normalfields/potentials of the Earth, including underneath the ocean, althoughthey are many dB below the normal field fluctuations whose gradients aredetected by normal sensors. By detecting this "internal" information,Charged Barrier detectors would be able to detect these hidden "pinna"signals and dramatically increase the information available to the sensorsystem. Terrain-following cruise missiles, for example, could be detected,tracked, and identified by this means, as could submarines, floatingsubsurface mines, etc. Field camouflage and decoying would be essentiallyuseless against such sensors.

Adaptation of Such "Radars" to SpecializedSensing

If sufficient of the "pinna" signals can be detected and utilized, atotally new method of internal target identification anddiscrimination -- as well as typing and identification of the internalwarhead(s) and other components on board the target -- could be developedusing the Charged Barrier technology. From the pinna signals, decoys andECM-generated "false returns" could readily be discriminated from the realtargets.

Specialized detection devices for airports could be developed that wouldutilize the pinna information to easily and cheaply detect and identifythe contents of packages, luggage, etc. This would provide enhancedsecurity against terrorist bombs, weapons, drug smuggling, etc.

 Ofparticular usefulness would be the development of "pinna scanning" sensorswhich could peer beneath the ground's surface, detecting mines, tunnels,etc. Identification and classification of the detected subterraneanobjects and their interior contents is also foreseeable.

Induction of Forces and Patterns of Forces In AtomicNuclei

A force-free (gradient-free) scalar potential readily penetrates theelectron shells of the atom, penetrating directly to the nucleus andinteracting with it. By infolding desired E-fields andB-fields inside the scalar potential (inside pure DC voltage), onecan insert desired electromagnetic forces -- and control theirmagnitude, direction, frequency, and duration -- directly inside an atomicnucleus. At least in theory, by sustaining and manipulating these forcesin the nucleus, the atomic nucleus itself is subject to directmanipulation and engineering, as contrasted to the present practice of"firing in a bullet" such as a neutron to get through the electron shellbarriers and produce limited nuclear effects. It may be that eventuallysuch an electromagnetic nucleus-engineering approach, made possibleby Charged Barrier technology, can be utilized to render harmless thesteadily accumulating radioactive wastes around the world.

Reduction of Drag on Vehicle Skins

Another application also looms for the use of the charged barriertechnology. This application is for the reduction of the drag of themedium on vehicle skins. My preliminary tests on model boats in water havedemonstrated the effect to exist and operate, though more definitive testsare called for.

Basically the molecules or atoms of the medium, in contact with the skinof a moving vehicle, create a boundary layer of dense matter which exertsfrictional drag forces on the skin to retard the forward movement. Becauseof the use of phase conjugation and Poynting flow, rather than purecurrent dq/dt flow, the charged barrier technology can be used to chargethe skin of the vehicle in a peculiar fashion. The tiny nonlinearities ofthe skin become pumped phase conjugate mirrors (considering the internalelectromagnetics of the static charge, where the hidden biwaves comprisethe pumping). Let us consider such a charged skin as now containing aseries of pumped phase conjugate mirrors (PPCMs). The incomingatoms or molecules of the medium comprising the boundary layer do possessasymmetrical charge volumes, and so they produce "signal wave" inputs tothe PPCMs as they come in. With a good charge on the PPCMs, their hiddenbiwave pumping is substantial. Consequently the PPCMs emit highlyamplified antisignals -- phase conjugate replica waves (PCRs). By thedistortion correction theorem, these highly amplified antiwaves backtrackprecisely to the incoming asymmetric charges, where they interact toproduce force fields that repel them.36 The point is, there is no recoil on apumped phase conjugate mirror (PPCM), when it emits such a highlyamplified PCR. This is already a theoretical and experimental fact innonlinear optics. So there is no consequent Newtonian third law recoilforce back on the PPCMs comprising the skin of the vehicle.

In short, one has produced a deliberate "pinpoint, repelling force field"upon each of the incoming atoms and molecules of the medium, without anymatching recoil force upon the moving vehicle. Better, all the energy inthe force field is concentrated only upon the targets, rather thandistributed uniformly in space along wavefronts. The end result is todramatically reduce or lower the boundary layer, without any drag forcereaction being exerted upon the vehicle by that operation. Thissignificantly reduces the skin drag and increases the speed of the vehiclethrough the medium, for a given on-board propulsion force.

Application of this new kind of "smart skin" technology isstraightforward. It should allow ships that increase (even double) theirvelocity through water for the same expenditure of propeller energy. Itshould enable super-fast torpedoes, perhaps in the 200 to 300 nauticalmiles per hour range.

Extended Application of Induced Forces at aDistance

In theory, the "pinpoint" application of force upon a distant target, byself-targeting processes, is not limited to the small distance required toprevent formation of much of the skin boundary layer. Instead, theself-targeting effect can be extended. Our space-borne laser research anddevelopment, for example, called for using iterative phase conjugateshooting and self-targeting to hold a laser beam locked on the same spoton a rising hostile booster, up to 10,000 miles distance, providing dwelltime for the laser to burn through the casing and destroy the boosterduring its launch phase.

Follow-on generations of development should add the capability of pinpointrepulsion by an attacked ship of incoming hostile torpedoes, shells,missiles, etc. It should enable faster aircraft, with reduced fuelconsumption. In large buildings it could conceivably be applied to lowerthe resistance of the ducting to the passage of heated or cooled air. Inheat pumps it should also increase the COP past the present theoretical8.22 limit, by dramatically reducing the drag exerted by the gases beingcompressed and pumped.

With use of the pinna information, scanning the ocean's surface can detectand track submarines lurking in the ocean's depths. Literally the oceanscan be made "transparent" in a specialized sense.

There are many other applications for the charged barrier technology; theabove examples simply serve as "for instances" to tickle theimagination.

In Summary

As can be seen, the advent of Charged Barrier technology and its furtherdevelopment offers a breathtaking extension of present electronictechnologies.

Dramatic new capabilities emerge in military defense, to provide for thesecurity of our nation, our armed forces, and our civilian population.

In astrophysics, the detection and use of the "pinna" information couldprovide unparalleled details on the internal mechanisms, structures, andconstituency of planets and stars.

In geophysics, the "pinna" information could provide unparalleled detailson the layers, structures, constituents, faults, etc. of the earthunderneath the surface. Again, in a specialized sense the earth is made"transparent."

In medicine, the "pinna" information contained within the weak EMemanations from the body would provide details on structures, cellulardisorders, infections, and other irregularities within the body, includingorgans. Eventually a comprehensive diagnosis of the entire body and itscellular functions could be provided by externally scanning the pinnahidden-variable "information content of the field."

In biology the pinna information could provide unparalleled insight intothe details and functioning of the brain, its different layers andstructures, and of the nervous system. Further, pinna information couldreveal the structuring and functioning of the body's recuperative system,as contrasted to the immune system. Very little is presently known aboutthe recuperative system, which is usually just "assumed" by medicalscientists.


Just as the microscope opened up a previously hidden microworld and itsdynamics, the Charged Barrier technology will open up a previously hidden"internal" hidden variable electrodynamic world that will enlarge everypresent electronic field of endeavor.

Long ago a great scientist, Max Planck,37 said:

 "An important scientific innovation rarely makes its way by graduallywinning over and converting its opponents: it rarely happens that Saulbecomes Paul. What does happen is that its opponents gradually die out,and that the growing generation is familiarized with the ideas from thebeginning."

Arthur C. Clarke38 characterized thefour successive stages of response to any new and revolutionary innovationas follows:

 It's crazy! It may be possible -- so what? I said it was a good idea all along. I thought of it first.

The Aharonov-Bohm effect, predicted in 1959, required nearly 30 yearsafter its 1960 demonstration by Chambers until it was begrudginglyaccepted. Mayer, who discovered the modern thermodynamic notion ofconservation of energy related to work, was hounded and chastised soseverely that he suffered a breakdown. Years later, he was lionized forthe same effort! Wegener, a German meteorologist, was made a laughingstock and his name became a pseudonym for "utter fool," because headvanced the concept of continental drift in 1912. In the 1960s theevidence for continental drift became overwhelming, and today it is widelytaught and part of the standard science curriculum. Gauss, the greatmathematician, worked out nonlinear geometry but kept it firmly hidden for30 years, because he knew that if he published it, his peers would destroyhim. In the 1930s Goddard was ridiculed and called "moon-mad Goddard"because he predicted his rocketry would carry men to the moon. Years laterwhen the Nazi fired V-1 and V-2 rockets against London, those rockets usedthe gyroscopic stabilization and many other features discovered andpioneered by Goddard. And as everyone knows, rocketry did indeed carry mento the moon. Science has a long and unsavory history of severely punishinginnovation and new thinking. In the modern world such scientificsuppression of innovation is uncalled-for, but it is still very much therule rather than the exception.

The Charged Barrier technology is an innovation which calls for using theenergy flow in circuits that is already

(i) extracted from the vacuum flux and (ii) freely provided to theexternal circuit by the source dipoles.

It utilizes an extended electromagnetics that includes a higher topologyand a new, inner "hidden variable" EM. This "inner EM" has been in theliterature for nearly a hundred years, but ignored. The use of the chargedbarrier technology will expose many of the present shortcomings in EMtheory and models, but it should also lead to a corrected, highly extendedelectromagnetics.

Now that you know the theory behind how this technology works, be awareyou still need the exact design parameters and component tolerances inorder to duplicate the technology.

Let us hope that the charged barrier technology can receive the fullscientific attention, testing, and theoretical modeling that it deserves.With that attention and examination I believe my technology will usher ina new revolution in electronics.

Copyright © 1997 Bill FogalAll Rights Reserved Worldwide

Website by  Gary Hawkins,Horizon Technology